NTD3808N-1G

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	NTD3808N-1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 16V 12A IPAK
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±16V
F E T Type	N-Channel
Packaging	Tube
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 250µA
Package Case	TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type	Through Hole
Rds On Max Id Vgs	5.8 mOhm @ 15A, 10V
Gate Charge Qg Max Vgs	21nC @ 4.5V
Detailed Description	329488
Power Dissipation Max	1.3W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Supplier Device Package	I-PAK
Drainto Source Voltage Vdss	16V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1660pF @ 12V
Current Continuous Drain Id25 C	12A (Ta), 76A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

Loading security check...

Please verify you are human by completing the security check.