NDT01N60T1G

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Part Number	NDT01N60T1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 0.4A SOT223
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	NDT01N60T1GOSCT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3.7V @ 50µA
Package Case	TO-261-4, TO-261AA
Mounting Type	Surface Mount
Rds On Max Id Vgs	8.5 Ohm @ 200mA, 10V
Gate Charge Qg Max Vgs	7.2nC @ 10V
Detailed Description	330915
Power Dissipation Max	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SOT-223 (TO-261)
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	160pF @ 25V
Current Continuous Drain Id25 C	400mA (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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