NDD02N60Z-1G

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Part Number	NDD02N60Z-1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V IPAK
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	NDD02N60Z-1G-ND NDD02N60Z-1GOS NDD02N60Z1G
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4.5V @ 50µA
Package Case	TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type	Through Hole
Rds On Max Id Vgs	4.8 Ohm @ 1A, 10V
Gate Charge Qg Max Vgs	10.1nC @ 10V
Detailed Description	340421
Power Dissipation Max	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	I-PAK
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	274pF @ 25V
Current Continuous Drain Id25 C	2.2A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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