MTW32N20E

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Part Number	MTW32N20E
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 200V 32A TO-247
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tube
Other Names	MTW32N20EOS
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-247-3
Mounting Type	Through Hole
Rds On Max Id Vgs	75 mOhm @ 16A, 10V
Gate Charge Qg Max Vgs	120nC @ 10V
Detailed Description	326577
Power Dissipation Max	180W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-247
Drainto Source Voltage Vdss	200V
Lead Free Status Ro H S Status	Contains lead / RoHS non-compliant
Input Capacitance Ciss Max Vds	5000pF @ 25V
Current Continuous Drain Id25 C	32A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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