JAN2N6849U
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | JAN2N6849U |
| Manufacturer | Microsemi |
| Description | MOSFET P-CH 18-LCC |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | Military, MIL-PRF-19500/564 |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Bulk |
| Other Names | JAN2N6849U-MIL |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 320 mOhm @ 6.5A, 10V |
| Gate Charge Qg Max Vgs | 34.8nC @ 10V |
| Detailed Description | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49) |
| Power Dissipation Max | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Continuous Drain Id25 C | 6.5A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |