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IXTT1N100

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IXTT1N100
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 1.5A TO-268
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Packaging Tube
Technology MOSFET (Metal Oxide)
Vgsth Max Id 4.5V @ 25µA
Package Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Rds On Max Id Vgs 11 Ohm @ 1A, 10V
Gate Charge Qg Max Vgs 23nC @ 10V
Detailed Description 331183
Power Dissipation Max 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-268
Drainto Source Voltage Vdss 1000V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 480pF @ 25V
Current Continuous Drain Id25 C 1.5A (Tc)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 10V

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