IXTA1R6N100D2
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | IXTA1R6N100D2 |
| Manufacturer | IXYS Corporation |
| Description | MOSFET N-CH 1000V 1.6A D2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| F E T Feature | Depletion Mode |
| Technology | MOSFET (Metal Oxide) |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 10 Ohm @ 800mA, 0V |
| Gate Charge Qg Max Vgs | 27nC @ 5V |
| Detailed Description | N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-263 (IXTA) |
| Power Dissipation Max | 100W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-263 (IXTA) |
| Drainto Source Voltage Vdss | 1000V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 645pF @ 25V |
| Current Continuous Drain Id25 C | 1.6A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |