IPI041N12N3GAKSA1

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Part Number	IPI041N12N3GAKSA1
Manufacturer	International Rectifier (Infineon Technologies)
Description	MOSFET N-CH 120V 120A TO262-3
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	OptiMOS™
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tube
Other Names	IPI041N12N3 G IPI041N12N3 G-ND IPI041N12N3G SP000652748
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 270µA
Package Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type	Through Hole
Rds On Max Id Vgs	4.1 mOhm @ 100A, 10V
Gate Charge Qg Max Vgs	211nC @ 10V
Detailed Description	325920
Power Dissipation Max	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Supplier Device Package	PG-TO262-3
Drainto Source Voltage Vdss	120V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	13800pF @ 60V
Current Continuous Drain Id25 C	120A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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