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GP1M020A060N

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Product Details

Part Number GP1M020A060N
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 600V 20A TO3PN
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Rds On Max Id Vgs 330 mOhm @ 10A, 10V
Power Dissipation Max 347W (Tc)
Packaging Tape & Reel (TR)
Package Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 600V 20A (Tc) 347W (Tc) Through Hole TO-3PN
Current Continuous Drain Id25 C 20A (Tc)
Vgs Max ±30V
Input Capacitance Ciss Max Vds 2097pF @ 25V
Gate Charge Qg Max Vgs 76nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 600V

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