FQP3N50C-F080

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Part Number	FQP3N50C-F080
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 500V 1.8A TO220-3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Other Names	FQP3N50C-F080-ND FQP3N50C-F080OS FQP3N50C_F080 FQP3N50C_F080-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-220-3
Mounting Type	Through Hole
Rds On Max Id Vgs	2.5 Ohm @ 1.5A, 10V
Gate Charge Qg Max Vgs	13nC @ 10V
Detailed Description	330596
Power Dissipation Max	62W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-220-3
Drainto Source Voltage Vdss	500V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	365pF @ 25V
Current Continuous Drain Id25 C	1.8A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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