FQD12N20LTM

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Part Number	FQD12N20LTM
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 200V 9A DPAK
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	QFET®
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	FQD12N20LTM-ND FQD12N20LTMTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2V @ 250µA
Package Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Rds On Max Id Vgs	280 mOhm @ 4.5A, 10V
Gate Charge Qg Max Vgs	21nC @ 5V
Detailed Description	324579
Power Dissipation Max	2.5W (Ta), 55W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	D-Pak
Drainto Source Voltage Vdss	200V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1080pF @ 25V
Current Continuous Drain Id25 C	9A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	5V, 10V

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