FQA11N90

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Part Number	FQA11N90
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 900V 11.4A TO-3P
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	QFET®
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	5V @ 250µA
Package Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Rds On Max Id Vgs	960 mOhm @ 5.7A, 10V
Gate Charge Qg Max Vgs	94nC @ 10V
Detailed Description	331583
Power Dissipation Max	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-3P
Drainto Source Voltage Vdss	900V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	3500pF @ 25V
Current Continuous Drain Id25 C	11.4A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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