FDS2672

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Part Number	FDS2672
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 200V 3.9A 8-SOIC
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	UltraFET™
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
Other Names	FDS2672CT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Rds On Max Id Vgs	70 mOhm @ 3.9A, 10V
Gate Charge Qg Max Vgs	46nC @ 10V
Detailed Description	324104
Power Dissipation Max	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	8-SO
Drainto Source Voltage Vdss	200V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	2535pF @ 100V
Current Continuous Drain Id25 C	3.9A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	6V, 10V

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