FDN359AN

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Part Number	FDN359AN
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 2.7A SSOT-3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	FDN359AN_F095 FDN359ANTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3V @ 250µA
Package Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Rds On Max Id Vgs	46 mOhm @ 2.7A, 10V
Gate Charge Qg Max Vgs	7nC @ 5V
Detailed Description	332546
Power Dissipation Max	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SuperSOT-3
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	480pF @ 10V
Current Continuous Drain Id25 C	2.7A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	4.5V, 10V

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