FDN338P_G

Invent, Innovate, Integrate

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Part Number	FDN338P_G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	INTEGRATED CIRCUIT
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±8V
F E T Type	P-Channel
Packaging	Bulk
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.5V @ 250µA
Package Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Rds On Max Id Vgs	115 mOhm @ 1.6A, 4.5V
Gate Charge Qg Max Vgs	6.2nC @ 4.5V
Detailed Description	329939
Power Dissipation Max	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SuperSOT-3
Drainto Source Voltage Vdss	20V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	451pF @ 10V
Current Continuous Drain Id25 C	1.6A (Ta)
Drive Voltage Max Rds On Min Rds On	2.5V, 4.5V

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