FDN306P

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Part Number	FDN306P
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 12V 2.6A SSOT3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±8V
F E T Type	P-Channel
Packaging	Tape & Reel (TR)
Other Names	FDN306P_F095 FDN306P_F095TR FDN306P_F095TR-ND FDN306PF095 FDN306PTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.5V @ 250µA
Package Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Rds On Max Id Vgs	40 mOhm @ 2.6A, 4.5V
Gate Charge Qg Max Vgs	17nC @ 4.5V
Detailed Description	331889
Power Dissipation Max	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	SuperSOT-3
Drainto Source Voltage Vdss	12V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1138pF @ 6V
Current Continuous Drain Id25 C	2.6A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	1.8V, 4.5V

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