FDFMA3N109

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Part Number	FDFMA3N109
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 2.9A MICRO2X2
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±12V
F E T Type	N-Channel
Packaging	Cut Tape (CT)
F E T Feature	Schottky Diode (Isolated)
Other Names	FDFMA3N109CT FDFMA3N109CT-ND FDFMA3N109FSCT
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	1.5V @ 250µA
Package Case	6-VDFN Exposed Pad
Mounting Type	Surface Mount
Rds On Max Id Vgs	123 mOhm @ 2.9A, 4.5V
Gate Charge Qg Max Vgs	3nC @ 4.5V
Detailed Description	337958
Power Dissipation Max	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	6-MicroFET (2x2)
Drainto Source Voltage Vdss	30V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	220pF @ 15V
Current Continuous Drain Id25 C	2.9A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	2.5V, 4.5V

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