FDD850N10LD

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Part Number	FDD850N10LD
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 100V 15.3A DPAK
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	PowerTrench®
Vgs Max	±20V
F E T Type	N-Channel
Packaging	Tape & Reel (TR)
Other Names	FDD850N10LD-ND FDD850N10LDTR
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	2.5V @ 250µA
Package Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type	Surface Mount
Rds On Max Id Vgs	75 mOhm @ 12A, 10V
Gate Charge Qg Max Vgs	28.9nC @ 10V
Detailed Description	330430
Power Dissipation Max	42W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-252-5
Drainto Source Voltage Vdss	100V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1465pF @ 25V
Current Continuous Drain Id25 C	15.3A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	5V, 10V

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