FCP190N65S3R0

Invent, Innovate, Integrate

Images are for reference only. See Product Specifications for product details.

Part Number	FCP190N65S3R0
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 650V 190MOHM TO220 I
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	SuperFET® III
Vgs Max	±30V
F E T Type	N-Channel
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4.5V @ 1.7mA
Package Case	TO-220-3
Mounting Type	Through Hole
Rds On Max Id Vgs	190 mOhm @ 8.5A, 10V
Gate Charge Qg Max Vgs	33nC @ 10V
Detailed Description	328013
Power Dissipation Max	144W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-220-3
Drainto Source Voltage Vdss	650V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1350pF @ 400V
Current Continuous Drain Id25 C	17A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

Loading security check...

Please verify you are human by completing the security check.