FCP11N60N-F102

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Part Number	FCP11N60N-F102
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 10.8A TO220F
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	FCP11N60N_F102 FCP11N60N_F102-ND
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 250µA
Package Case	TO-220-3 Full Pack
Mounting Type	Through Hole
Rds On Max Id Vgs	299 mOhm @ 5.4A, 10V
Gate Charge Qg Max Vgs	35.6nC @ 10V
Detailed Description	330337
Power Dissipation Max	94W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Supplier Device Package	TO-220F
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1505pF @ 100V
Current Continuous Drain Id25 C	10.8A (Tc)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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