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Product Image
ES6U1T2R

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number ES6U1T2R
Manufacturer LAPIS Semiconductor
Description MOSFET P-CH 12V 1.3A WEMT6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±10V
F E T Type P-Channel
Packaging Cut Tape (CT)
F E T Feature Schottky Diode (Isolated)
Other Names ES6U1T2RCT
Technology MOSFET (Metal Oxide)
Vgsth Max Id 1V @ 1mA
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Rds On Max Id Vgs 260 mOhm @ 1.3A, 4.5V
Gate Charge Qg Max Vgs 2.4nC @ 4.5V
Detailed Description 340439
Power Dissipation Max 700mW (Ta)
Operating Temperature 150°C (TJ)
Supplier Device Package 6-WEMT
Drainto Source Voltage Vdss 12V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 290pF @ 6V
Current Continuous Drain Id25 C 1.3A (Ta)
Moisture Sensitivity Level M S L 1 (Unlimited)
Drive Voltage Max Rds On Min Rds On 1.5V, 4.5V

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