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EPC2016

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Product Details

Part Number EPC2016
Manufacturer EPC
Description TRANS GAN 100V 11A BUMPED DIE
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 2.5V @ 3mA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On Max Id Vgs 16 mOhm @ 11A, 5V
Packaging Tape & Reel (TR)
Package Case Die
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level M S L 1 (Unlimited)
F E T Type N-Channel
Detailed Description N-Channel 100V 11A (Ta) Surface Mount Die
Current Continuous Drain Id25 C 11A (Ta)
Vgs Max +6V, -5V
Other Names 917-1027-2
Input Capacitance Ciss Max Vds 520pF @ 50V
Gate Charge Qg Max Vgs 5.2nC @ 5V
Drive Voltage Max Rds On Min Rds On 5V
Drainto Source Voltage Vdss 100V

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