2N7635-GA
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | 2N7635-GA |
| Manufacturer | GeneSiC Semiconductor |
| Description | TRANS SJT 650V 4A TO-257 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package | TO-257 |
| Rds On Max Id Vgs | 415 mOhm @ 4A |
| Power Dissipation Max | 47W (Tc) |
| Packaging | Bulk |
| Package Case | TO-257-3 |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Detailed Description | 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257 |
| Current Continuous Drain Id25 C | 4A (Tc) (165°C) |
| Other Names | 1242-1146 |
| Input Capacitance Ciss Max Vds | 324pF @ 35V |
| Drainto Source Voltage Vdss | 650V |