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2N7635-GA

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Product Details

Part Number 2N7635-GA
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 650V 4A TO-257
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Technology SiC (Silicon Carbide Junction Transistor)
Supplier Device Package TO-257
Rds On Max Id Vgs 415 mOhm @ 4A
Power Dissipation Max 47W (Tc)
Packaging Bulk
Package Case TO-257-3
Operating Temperature -55°C ~ 225°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 1 (Unlimited)
Detailed Description 650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257
Current Continuous Drain Id25 C 4A (Tc) (165°C)
Other Names 1242-1146
Input Capacitance Ciss Max Vds 324pF @ 35V
Drainto Source Voltage Vdss 650V

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