2N7000,126
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2N7000,126 |
| Manufacturer | NXP Semiconductors / Freescale |
| Description | MOSFET N-CH 60V 300MA TO-92 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | TrenchMOS™ |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tape & Box (TB) |
| Other Names | 2N7000 AMO 2N7000 AMO-ND 934003460126 |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2V @ 1mA |
| Package Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 5 Ohm @ 500mA, 10V |
| Detailed Description | N-Channel 60V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3 |
| Power Dissipation Max | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-92-3 |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 40pF @ 10V |
| Current Continuous Drain Id25 C | 300mA (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |