2N6849
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2N6849 |
| Manufacturer | Microsemi |
| Description | MOSFET P-CH 100V TO-205AF TO-39 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±20V |
| F E T Type | P-Channel |
| Packaging | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 320 mOhm @ 6.5A, 10V |
| Gate Charge Qg Max Vgs | 34.8nC @ 10V |
| Detailed Description | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39 |
| Power Dissipation Max | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-39 |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Continuous Drain Id25 C | 6.5A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |