US6M2TR
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | US6M2TR |
| Manufacturer | LAPIS Semiconductor |
| Description | MOSFET N/P-CH 30V/20V TUMT6 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| F E T Type | N and P-Channel |
| Power Max | 1W |
| Packaging | Cut Tape (CT) |
| F E T Feature | Standard |
| Other Names | US6M2CT |
| Vgsth Max Id | 1.5V @ 1mA |
| Package Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 240 mOhm @ 1.5A, 4.5V |
| Base Part Number | *M2 |
| Gate Charge Qg Max Vgs | 2.2nC @ 4.5V |
| Detailed Description | Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6 |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TUMT6 |
| Drainto Source Voltage Vdss | 30V, 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 80pF @ 10V |
| Current Continuous Drain Id25 C | 1.5A, 1A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |