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Manufacturer Image
TPC8212-H(TE12LQ,M

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TPC8212-H(TE12LQ,M
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET 2N-CH 30V 6A SOP8
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Arrays
F E T Type 2 N-Channel (Dual)
Power Max 450mW
Packaging Tape & Reel (TR)
F E T Feature Logic Level Gate
Vgsth Max Id 2.3V @ 1mA
Package Case 8-SOIC (0.173", 4.40mm Width)
Mounting Type Surface Mount
Rds On Max Id Vgs 21 mOhm @ 3A, 10V
Gate Charge Qg Max Vgs 16nC @ 10V
Detailed Description 341814
Operating Temperature 150°C (TJ)
Supplier Device Package 8-SOP (5.5x6.0)
Drainto Source Voltage Vdss 30V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 840pF @ 10V
Current Continuous Drain Id25 C 6A
Moisture Sensitivity Level M S L 1 (Unlimited)

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