JAN2N7334
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | JAN2N7334 |
| Manufacturer | Microsemi |
| Description | MOSFET 4N-CH 100V 1A MO-036AB |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Arrays |
| Series | Military, MIL-PRF-19500/597 |
| F E T Type | 4 N-Channel |
| Power Max | 1.4W |
| Packaging | Bulk |
| F E T Feature | Standard |
| Other Names | JAN2N7334-MIL |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | 14-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 700 mOhm @ 600mA, 10V |
| Gate Charge Qg Max Vgs | 60nC @ 10V |
| Detailed Description | Mosfet Array 4 N-Channel 100V 1A 1.4W Through Hole MO-036AB |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | MO-036AB |
| Drainto Source Voltage Vdss | 100V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Continuous Drain Id25 C | 1A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |