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Product Image
NJVNJD35N04G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number NJVNJD35N04G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 350V 4A DPAK-4
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 45W
Packaging Tube
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Base Part Number NJD35N04
Transistor Type NPN - Darlington
Detailed Description 345869
Frequency Transition 90MHz
Operating Temperature -65°C ~ 150°C (TJ)
Vce Saturation Max Ib Ic 1.5V @ 20mA, 2A
Current Collector Ic Max 4A
Supplier Device Package DPAK
D C Current Gainh F E Min Ic Vce 2000 @ 2A, 2V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 50µA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 350V

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