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MJD122T4

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number MJD122T4
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A DPAK
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 1.75W
Packaging Cut Tape (CT)
Other Names MJD122T4OSCT
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Base Part Number MJD122
Transistor Type NPN - Darlington
Detailed Description 346284
Frequency Transition 4MHz
Operating Temperature -65°C ~ 150°C (TJ)
Vce Saturation Max Ib Ic 4V @ 80mA, 8A
Current Collector Ic Max 8A
Supplier Device Package DPAK
D C Current Gainh F E Min Ic Vce 1000 @ 4A, 4V
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Current Collector Cutoff Max 10µA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 100V

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