MJD122-1
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MJD122-1 |
| Manufacturer | STMicroelectronics |
| Description | TRANS NPN DARL 100V 8A TO251 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 20W |
| Packaging | Bulk |
| Other Names | 497-16183 MJD122-1-ND |
| Package Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Base Part Number | MJD122 |
| Transistor Type | NPN - Darlington |
| Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3 |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation Max Ib Ic | 4V @ 80mA, 8A |
| Current Collector Ic Max | 8A |
| Supplier Device Package | TO-251-3 |
| D C Current Gainh F E Min Ic Vce | 1000 @ 4A, 4V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 10µA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 100V |