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BDV65B

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number BDV65B
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 10A TO-218
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 125W
Packaging Tube
Package Case TO-218-3
Mounting Type Through Hole
Transistor Type NPN - Darlington
Detailed Description 364114
Operating Temperature -65°C ~ 150°C (TJ)
Vce Saturation Max Ib Ic 2V @ 20mA, 5A
Current Collector Ic Max 10A
Supplier Device Package SOT-93
D C Current Gainh F E Min Ic Vce 1000 @ 5A, 4V
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Current Collector Cutoff Max 1mA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 100V

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