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Manufacturer Image
2SC2229(TE6SAN1F,M

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 2SC2229(TE6SAN1F,M
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN 50MA 150V TO226-3
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 800mW
Packaging Bulk
Other Names 2SC2229(TE6SAN1FM 2SC2229TE6SAN1FM
Package Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
Transistor Type NPN
Detailed Description 342467
Frequency Transition 120MHz
Operating Temperature 150°C (TJ)
Vce Saturation Max Ib Ic 500mV @ 1mA, 10mA
Current Collector Ic Max 50mA
Supplier Device Package TO-92MOD
D C Current Gainh F E Min Ic Vce 70 @ 10mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 150V

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