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Manufacturer Image
2SB906-Y(TE16L1,NQ

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 2SB906-Y(TE16L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 60V 3A PW-MOLD
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 1W
Packaging Cut Tape (CT)
Other Names 2SB906-Y(Q) 2SB906-Y(Q)-ND 2SB906-Y(TE16L1,NQ) 2SB906-Y(TE16L1,NQCT 2SB906-Y(TE16L1NQ) 2SB906-Y(TE16L1NQ)-ND 2SB906-Y(TE16L1NQ-ND 2SB906-Y(TE16L1NQCT 2SB906Y(TE16L1NQ 2SB906Y(TE16L1NQ-ND 2SB906YTE16L1NQ
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Transistor Type PNP
Detailed Description 363715
Frequency Transition 9MHz
Operating Temperature 150°C (TJ)
Vce Saturation Max Ib Ic 1.7V @ 300mA, 3A
Current Collector Ic Max 3A
Supplier Device Package PW-MOLD
D C Current Gainh F E Min Ic Vce 100 @ 500mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100µA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 60V

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