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Manufacturer Image
2SA965-Y,T6F(J

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 2SA965-Y,T6F(J
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 800MA 120V TO226-3
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single
Power Max 900mW
Packaging Bulk
Other Names 2SA965-YT6F(J 2SA965YT6FJ
Package Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
Transistor Type PNP
Detailed Description 344766
Frequency Transition 120MHz
Operating Temperature 150°C (TJ)
Vce Saturation Max Ib Ic 1V @ 50mA, 500mA
Current Collector Ic Max 800mA
Supplier Device Package LSTM
D C Current Gainh F E Min Ic Vce 80 @ 100mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 120V

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