2SA1382,T6MIBF(J

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Part Number	2SA1382,T6MIBF(J
Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 2A 50V TO226-3
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - Bipolar (BJT) - Single
Power Max	900mW
Packaging	Bulk
Other Names	2SA1382T6MIBF(J 2SA1382T6MIBFJ
Package Case	TO-226-3, TO-92-3 Long Body
Mounting Type	Through Hole
Transistor Type	PNP
Detailed Description	360487
Frequency Transition	110MHz
Operating Temperature	150°C (TJ)
Vce Saturation Max Ib Ic	500mV @ 33mA, 1A
Current Collector Ic Max	2A
Supplier Device Package	TO-92MOD
D C Current Gainh F E Min Ic Vce	150 @ 500mA, 2V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Current Collector Cutoff Max	100nA (ICBO)
Moisture Sensitivity Level M S L	1 (Unlimited)
Voltage Collector Emitter Breakdown Max	50V

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