2N5308
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2N5308 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS NPN DARL 40V 1.2A TO-92 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single |
| Power Max | 625mW |
| Packaging | Bulk |
| Package Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Base Part Number | 2N5308 |
| Transistor Type | NPN - Darlington |
| Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation Max Ib Ic | 1.4V @ 200µA, 200mA |
| Current Collector Ic Max | 1.2A |
| Supplier Device Package | TO-92-3 |
| D C Current Gainh F E Min Ic Vce | 7000 @ 2mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 100nA (ICBO) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 40V |