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Manufacturer Image
RN1426TE85LF

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RN1426TE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 200MW SMINI
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 200mW
Packaging Tape & Reel (TR)
Other Names RN1426(TE85L,F)
Package Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Base Part Number RN142*
Resistor Base R1 1 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description 340462
Frequency Transition 300MHz
Vce Saturation Max Ib Ic 250mV @ 1mA, 50mA
Current Collector Ic Max 800mA
Resistor Emitter Base R2 10 kOhms
Supplier Device Package S-Mini
D C Current Gainh F E Min Ic Vce 90 @ 100mA, 1V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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