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Manufacturer Image
RN1116MFV,L3F

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RN1116MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 150mW
Other Names RN1116MFVL3F
Package Case SOT-723
Mounting Type Surface Mount
Resistor Base R1 4.7 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description 340174
Frequency Transition 250MHz
Vce Saturation Max Ib Ic 300mV @ 250µA, 5mA
Current Collector Ic Max 100mA
Resistor Emitter Base R2 10 kOhms
Supplier Device Package VESM
D C Current Gainh F E Min Ic Vce 50 @ 10mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Voltage Collector Emitter Breakdown Max 50V

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