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Manufacturer Image
RN1109MFV,L3F

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RN1109MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 50V 500NA VESM
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 150mW
Packaging Tape & Reel (TR)
Other Names RN1109MFVL3F
Package Case SOT-723
Mounting Type Surface Mount
Resistor Base R1 47 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description 339943
Vce Saturation Max Ib Ic 300mV @ 500µA, 5mA
Current Collector Ic Max 100mA
Resistor Emitter Base R2 22 kOhms
Supplier Device Package VESM
D C Current Gainh F E Min Ic Vce 70 @ 10mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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