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Manufacturer Image
PDTD123ES,126

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number PDTD123ES,126
Manufacturer NXP Semiconductors / Freescale
Description TRANS PREBIAS NPN 500MW TO92-3
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 500mW
Packaging Tape & Box (TB)
Other Names 934059143126 PDTD123ES AMO PDTD123ES AMO-ND
Package Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Base Part Number PDTD123
Resistor Base R1 2.2 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description 344596
Vce Saturation Max Ib Ic 300mV @ 2.5mA, 50mA
Current Collector Ic Max 500mA
Resistor Emitter Base R2 2.2 kOhms
Supplier Device Package TO-92-3
D C Current Gainh F E Min Ic Vce 40 @ 50mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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