PDTD113ZS,126
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | PDTD113ZS,126 |
| Manufacturer | NXP Semiconductors / Freescale |
| Description | TRANS PREBIAS NPN 500MW TO92-3 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Power Max | 500mW |
| Packaging | Tape & Box (TB) |
| Other Names | 934059145126 PDTD113ZS AMO PDTD113ZS AMO-ND |
| Package Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | Through Hole |
| Base Part Number | PDTD113 |
| Resistor Base R1 | 1 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
| Vce Saturation Max Ib Ic | 300mV @ 2.5mA, 50mA |
| Current Collector Ic Max | 500mA |
| Resistor Emitter Base R2 | 10 kOhms |
| Supplier Device Package | TO-92-3 |
| D C Current Gainh F E Min Ic Vce | 70 @ 50mA, 5V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Cutoff Max | 500nA |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 50V |