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DTD123TSTP

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number DTD123TSTP
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 300MW SPT
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Single, Pre-Biased
Power Max 300mW
Packaging Tape & Reel (TR)
Package Case SC-72 Formed Leads
Mounting Type Through Hole
Base Part Number DTD123
Resistor Base R1 2.2 kOhms
Transistor Type NPN - Pre-Biased
Detailed Description 345532
Frequency Transition 200MHz
Vce Saturation Max Ib Ic 300mV @ 2.5mA, 50mA
Current Collector Ic Max 500mA
Supplier Device Package SPT
D C Current Gainh F E Min Ic Vce 100 @ 50mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 40V

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