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Manufacturer Image
MT3S113TU,LF

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number MT3S113TU,LF
Manufacturer Toshiba Semiconductor and Storage
Description RF SIGE HETEROJUNCTION BIPOLAR N
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - RF
Gain 12.5dB
Power Max 900mW
Packaging Tape & Reel (TR)
Other Names MT3S113TU,LF(B MT3S113TULF MT3S113TULF(B MT3S113TULFTR
Package Case 3-SMD, Flat Leads
Mounting Type Surface Mount
Transistor Type NPN
Noise Figured B Typf 1.45dB @ 1GHz
Detailed Description 352417
Frequency Transition 11.2GHz
Operating Temperature 150°C (TJ)
Current Collector Ic Max 100mA
Supplier Device Package UFM
D C Current Gainh F E Min Ic Vce 200 @ 30mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 5.3V

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