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Manufacturer Image
MS2200

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number MS2200
Manufacturer Microsemi
Description TRANS RF BIPO 1167W 43.2A MS102
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - RF
Gain 9.7dB
Power Max 1167W
Packaging Bulk
Package Case M102
Mounting Type Chassis Mount
Transistor Type NPN
Detailed Description RF Transistor NPN 65V 43.2A 400MHz ~ 500MHz 1167W Chassis Mount M102
Frequency Transition 400MHz ~ 500MHz
Operating Temperature 200°C (TJ)
Current Collector Ic Max 43.2A
Supplier Device Package M102
D C Current Gainh F E Min Ic Vce 20 @ 5A, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 65V

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