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HN3C10FUTE85LF

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANSISTOR NPN US6
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - RF
Gain 11.5dB
Power Max 200mW
Packaging Cut Tape (CT)
Other Names HN3C10FUTE85LFCT
Package Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Transistor Type 2 NPN (Dual)
Noise Figured B Typf 1.1dB @ 1GHz
Detailed Description 353778
Frequency Transition 7GHz
Current Collector Ic Max 80mA
Supplier Device Package US6
D C Current Gainh F E Min Ic Vce 80 @ 20mA, 10V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 12V

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