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Manufacturer Image
HN3C51F-GR(TE85L,F

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HN3C51F-GR(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN 120V 0.1A SM6
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays
Power Max 300mW
Packaging Original-Reel®
Other Names HN3C51F-GR(TE85LF)DKR HN3C51F-GR(TE85LF)DKR-ND HN3C51F-GR(TE85LFDKR
Package Case SC-74, SOT-457
Mounting Type Surface Mount
Transistor Type 2 NPN (Dual)
Detailed Description 350958
Frequency Transition 100MHz
Operating Temperature 150°C (TJ)
Vce Saturation Max Ib Ic 300mV @ 1mA, 10mA
Current Collector Ic Max 100mA
Supplier Device Package SM6
D C Current Gainh F E Min Ic Vce 200 @ 2mA, 6V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 120V

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