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Manufacturer Image
HN1B01F-GR(TE85L,F

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HN1B01F-GR(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 50V 0.15A SM6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays
Power Max 300mW
Packaging Cut Tape (CT)
Other Names HN1B01F-GR(TE85LFCT
Package Case SC-74, SOT-457
Mounting Type Surface Mount
Transistor Type NPN, PNP
Detailed Description 350945
Frequency Transition 120MHz
Operating Temperature 125°C (TJ)
Vce Saturation Max Ib Ic 300mV @ 10mA, 100mA
Current Collector Ic Max 150mA
Supplier Device Package SM6
D C Current Gainh F E Min Ic Vce 200 @ 2mA, 6V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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