• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
RN1911FETE85LF

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number RN1911FETE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 100mW
Packaging Tape & Reel (TR)
Other Names RN1911FE(TE85L,F) RN1911FETE85LFTR
Package Case SOT-563, SOT-666
Mounting Type Surface Mount
Resistor Base R1 10 kOhms
Transistor Type 2 NPN - Pre-Biased (Dual)
Detailed Description 349895
Frequency Transition 250MHz
Vce Saturation Max Ib Ic 300mV @ 250µA, 5mA
Current Collector Ic Max 100mA
Supplier Device Package ES6
D C Current Gainh F E Min Ic Vce 120 @ 1mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 100nA (ICBO)
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

REQUEST A QUOTE

Loading security check...

Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us