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IMH10AT110

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IMH10AT110
Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS DUAL NPN SMT6
Category Discrete Semiconductor Products
Subcategory Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Power Max 300mW
Packaging Cut Tape (CT)
Other Names IMH10AT110CT
Package Case SC-74, SOT-457
Mounting Type Surface Mount
Base Part Number *MH10
Resistor Base R1 2.2 kOhms
Transistor Type 2 NPN - Pre-Biased (Dual)
Detailed Description 350064
Frequency Transition 250MHz
Vce Saturation Max Ib Ic 300mV @ 250µA, 5mA
Current Collector Ic Max 100mA
Resistor Emitter Base R2 47 kOhms
Supplier Device Package SMT6
D C Current Gainh F E Min Ic Vce 80 @ 10mA, 5V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Cutoff Max 500nA
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 50V

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